Well-aligned carbon nanotube array grown on Si-based nanoscale SiO2 islands

被引：10

作者：

Mei, YF

Wu, XL

Li, XF

Bao, XM

Wang, XZ

Hu, Z

Siu, GG

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Chem, Nanjing 210093, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 255卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

nanostructures; chemical vapor deposition processes; semi-conducting aluminum compounds;

D O I：

10.1016/S0022-0248(03)01254-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Well-aligned carbon nanotube (CNT) array grown on Si-based nanoscale SiO2 islands was obtained by microwave plasma-enhanced chemical vapor deposition under low temperature of 520degreesC. Atomic force microscope observation and Raman spectroscopic analysis disclosed the formation of the CNTs. The SiO2 islands formed by excess anodization of Si-based Al film. were found to be the growth points of the CNTs, which was confirmed by the C-V curves without charge characteristics. Position-controllable growth of CNTs was attempted on silicon substrate so as to explore significant applications in nanoelectronics and nanodevices. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：414 / 418

页数：5

共 19 条

[1] Diameter-controlled synthesis of carbon nanotubes [J].