Growth of polycrystalline diamond films on stainless steel without external barrier layers using oxy-acetylene flame

被引：11

作者：

Kumar, S ^{[1
]}

Malhotra, M ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

来源：

关键词：

combustion synthesis; diamond films; growth; buffer layer;

D O I：

10.1016/S0925-9635(98)00151-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline diamond films have been successfully deposited on stainless steel substrates using oxy-acetylene flame. Films have been characterized using scanning electron microscopy, X-ray diffraction and micro-Raman spectroscopy. Good quality diamond films were obtained by employing a short duration pretreatment of the substrates by the oxidizing outer zone of the flame, prior to film deposition using inner zone (acetylene feather) of the flame. Low growth temperatures (similar to 625 degrees C) and formation of oxides at the steel surfaces during pretreatment are suggested to be responsible for the growth of diamond films. (C) 1998 Elsevier Science S.A.

引用

页码：1043 / 1047

页数：5

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