Properties of high-efficiency CuInGaSe2 thin film solar cells

被引：130

作者：

Ramanathan, K ^{[1
]}

Teeter, G ^{[1
]}

Keane, JC ^{[1
]}

Noufi, R ^{[1
]}

机构：

[1] Natl Ctr Photovolta, Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2005年 / 480卷

关键词：

efficiency; CulnGaSe(2); solar cells;

D O I：

10.1016/j.tsf.2004.11.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present recent results on the growth and characterization of CuInGeSe2 (CIGS) thin film solar cells by the three-stage process. A conversion efficiency of 19.3% and 18.4% has been achieved for solar cells made from absorbers with band gap values of 1.15 and 1.21 eV, respectively. High open circuit voltages and fill factors are obtained. We attempt to relate these improvements to material and device properties. The results suggest that it might be possible to produce a 20% efficient solar cell by further optimization of the current collection. (c) 2004 Elsevier B.V All rights reserved.

引用

页码：499 / 502

页数：4

共 7 条

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Young, D
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Metzger, W
Noufi, R
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