Hole recapture limited single photon generation from a single n-type charge-tunable quantum dot

被引：15

作者：

Dalgarno, P. A. ^{[1
]}

McFarlane, J. ^{[1
]}

Brunner, D. ^{[1
]}

Lambert, R. W. ^{[1
]}

Gerardot, B. D. ^{[1
]}

Warburton, R. J. ^{[1
]}

Karrai, K. ^{[2
]}

Badolato, A. ^{[3
]}

Petroff, P. M. ^{[3
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] LMU, Dept Phys, Ctr Nanosci, D-80539 Munich, Germany

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2924315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The complete control of the electron occupation of a single InGaAs dot is shown to produce highly antibunched single photon emission with nonresonant optical excitation. Intensity correlation measurements show g((2))(0) values of 3% (50%) at low (high) excitation power. A distinct double peak structure is shown at time zero, demonstrating that although two photons may be emitted per excitation pulse, they are not simultaneously emitted. We interpret this feature as a hole recapture process from the wetting layer into the dot after initial recombination. The recapture dynamics is shown to be adjustable through engineering the valence potential. (c) 2008 American Institute of Physics.

引用

页数：3

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