Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs

被引：19

作者：

Meneghesso, G

Podda, S

Vanzi, M

机构：

[1] Univ Padua, DEI, I-35131 Padua, Italy

[2] INFM, Padua, Italy

[3] Univ Cagliari, DIEE, INFM, I-09123 Cagliari, Italy

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 9-10期

关键词：

D O I：

10.1016/S0026-2714(01)00201-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

After the results of a previous work [1], intermediate robustness of GaN/InGaN-on sapphire blue LEDs vs. ESD stress is investigated. Different from other cases, no evidence for defect-related weakness is available. The role of resistive current paths in focusing the flow of charge and the voltage peaks under both de and transient conditions is then considered, by means of simple considerations on a distributed network of elementary diodes and resistors representing the main electrical features of the LED structure. EL and EBIC maps on both regular and failed devices support the proposed interpretation. (C) 2001 Published by Elsevier Science Ltd.

引用

页码：1609 / 1614

页数：6