Nitrogen compounds and their influence on diamond deposition in flames

被引：18

作者：

Atakan, B ^{[1
]}

Beuger, M ^{[1
]}

Kohse-Höinghaus, K ^{[1
]}

机构：

[1] Univ Bielefeld, Fak Chem, D-33501 Bielefeld, Germany

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1999年 / 1卷 / 04期

关键词：

D O I：

10.1039/a808850k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of nitrogen-containing species on the growth of diamond films is well-established in microwave and hot filament chemical vapour deposition (CVD) systems. Here, diamond CVD was investigated in atmospheric acetylene-oxygen flames doped with N-containing species [N-2, N2O, NH3, N(CH3)(3)]. Small amounts of these additives increase the growth rate, while higher concentrations lead to preferential sp(2) carbon deposition. The growth-effective amount of N-additive decreases by more than an order of magnitude in the sequence N-2 > N(CH3)(3) congruent to N2O > NH3. Simulation of the gas phase chemistry in a stagnation-flow geometry shows that the transformation of the additives towards HCN, NO and N is strongly correlated with growth enhancement and film quality decrease.

引用

页码：705 / 708

页数：4

共 12 条

[1] SYNTHESIS OF DIAMOND FROM METHANE AND NITROGEN MIXTURE [J].