Performing accurate, robust and repeatable 1/f measurement is critical to meaningful modeling and simulation of 1/f noise. Accurate measurement and modeling of 1/f noise of such devices as deep submicron CMOS, HBTs, and RF passive components is critical to design of RF circuits. In this paper, a new [1] on-wafer flicker noise characterization system including test structure methodology is presented. The system, well suited for technology characterization, has been developed at Motorola in collaboration with Agilent Technologies.