Stress induced anisotropy effect for SAL films in magnetoresistive elements

被引:4
作者
Ishi, T
Suzuki, T
Ishiwata, N
Yamada, K
机构
[1] Functional Devices Res. Labs., NEC Corporation, Fuchu, Tokyo
关键词
D O I
10.1109/20.538633
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The stress configuration of SAL (soft adjacent layer)-biased magnetoresistive (MR) elements has been analyzed, in order to study the stress-induced anisotropy effect on the MR transfer characteristics. The stress analysis, on the basis of stress measurement results in the single-layer sheet films that formed the MR elements, shows that anisotropic tensile stress of around 100 to 300 MPa is induced in the element height direction in the SAL fdm with an open-pattern edge structure. Furthermore, we calculated the MR transfer curves using a micromagnetic model for samples with different saturation magnetostriction constant (lambda(S)) value for SAL films. Assuming anisotropic tensile stress of 300 MPa in the element height direction throughout the entire track region, a desirable lambda(S) value for SAL films is in the range from +1x10(-6) to -2x10(-6), because the stress-induced anisotropy in the SAL does not seriously affect the MR transfer curves.
引用
收藏
页码:3389 / 3391
页数:3
相关论文
共 6 条
[1]   THE EFFECTS OF MR INDUCED NONLINEARITIES ON CHANNEL PERFORMANCE [J].
CHOPRA, K ;
NIX, L ;
TABERSKI, KD .
IEEE TRANSACTIONS ON MAGNETICS, 1994, 30 (06) :4200-4202
[2]  
Koyanagi H., 1990, IEEE Translation Journal on Magnetics in Japan, V5, P185, DOI 10.1109/TJMJ.1990.4564244
[3]   THE INFLUENCE OF SUBSTRATE EDGE STRESS ON MAGNETORESISTIVE HEAD ANISOTROPY [J].
MARKHAM, D ;
SMITH, N .
IEEE TRANSACTIONS ON MAGNETICS, 1988, 24 (06) :2606-2608
[4]   INVERSE EFFECT OF MAGNETOSTRICTION IN YOKE TYPE MR HEADS [J].
MIYAUCHI, T ;
KIRA, T ;
YOSHIKAWA, M .
IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (05) :2497-2499
[5]  
WAGN PK, 1992, INT C