Study of dry etching resistance of methacrylate polymers for ArF excimer laser lithography

被引：34

作者：

Ohfuji, T ^{[1
]}

Endo, M ^{[1
]}

Takahashi, M ^{[1
]}

Naito, T ^{[1
]}

Tatsumi, T ^{[1
]}

Kuhara, K ^{[1
]}

Sasago, M ^{[1
]}

机构：

[1] ASET, Yokohama Res Ctr, Yokohama, Kanagawa 244, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

polymer; alicyclic; ArF; dry etching; resist; methacrylate;

D O I：

10.1117/12.312363

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have investigated dry-etching resistance of methacrylate polymers for use as ArF chemically amplified resists and proposed a new etching model that can predict the etching rate very accurately. The examined polymers were methacrylate polymers with alicyclic groups. The polymers were dry etched using a LAM TCP-9400 machine under the chlorine-based gas conditions used for poly-silicon etching. The obtained etching rate was explained in term of a carbon-atom-density parameter known as the ohnishi parameter. However, the fitting accuracy is not good enough especially for alicyclic polymers (R=0.87). And a ring parameter model also resulted in a similar fitting accuracy (R=0.86). Hence, we proposed a new model that introduced polymer-structure dependence into the carbon-atom-density model. The new model gives excellent agreement with measured data (R=0.99). And it is very useful in designing ArF resist polymers and predicting etching resistance of future ArF resists.

引用

页码：595 / 600

页数：4