Electrophotographically patterned thin-film silicon transistors

被引：14

作者：

Gleskova, H ^{[1
]}

Konenkamp, R ^{[1
]}

Wagner, S ^{[1
]}

Shen, DS ^{[1
]}

机构：

[1] UNIV ALABAMA,DEPT ELECT & COMP ENGN,HUNTSVILLE,AL 35899

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 06期

关键词：

D O I：

10.1109/55.496452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation, Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper, This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.

引用

页码：264 / 266

页数：3