Grain boundary-driven leakage path formation in HfO2 dielectrics

被引：115

作者：

Bersuker, G. ^{[1
]}

Yum, J. ^{[1
]}

Vandelli, L. ^{[1
,2
,3
]}

Padovani, A. ^{[1
,2
,3
]}

Larcher, L. ^{[1
,2
,3
]}

Iglesias, V. ^{[1
,4
]}

Porti, M. ^{[1
,4
]}

Nafria, M. ^{[1
,4
]}

McKenna, K. ^{[1
,5
,6
]}

Shluger, A. ^{[1
,5
,6
]}

Kirsch, P. ^{[1
]}

Jammy, R. ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] Univ Modena & Reggio Emilia, DISMI, I-42100 Reggio Emilia, Italy

[3] IU NET, I-42100 Reggio Emilia, Italy

[4] Univ Autonoma Barcelona, Bellaterra 08193, Spain

[5] UCL, London WC1E 6BT, England

[6] Tohoku Univ, Sendai, Miyagi 980, Japan

来源：

SOLID-STATE ELECTRONICS | 2011年 / 65-66卷

关键词：

High-k dielectrics; Grain boundaries; Trap assisted tunneling; Conductive AFM; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; STRESSES;

D O I：

10.1016/j.sse.2011.06.031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The evolution over time of the leakage current in HfO2-based MIM capacitors under continuous or periodic constant voltage stress (CVS) was studied for a range of stress voltages and temperatures. The data were analyzed based on the results of conductive atomic force microscopy (AFM) measurements demonstrating preferential current flow along grain boundaries (GBs) in the HfO2 dielectric and at) initio calculations, which show the formation of a conductive sub-band due to the precipitation of oxygen vacancies at the GBs. The simulations using the statistical multi-phonon trap-assisted tunneling (TAT) current description successfully reproduced the experimental leakage current stress time dependency by using the calculated energy characteristics of the O-vacancies. The proposed model suggests that the observed reversible increase in the stress current is caused by segregation of the oxygen vacancies at the GBs and their conversion to the TAT-active charge state caused by reversible electron trapping during CVS. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：146 / 150

页数：5

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