A CAD investigation of depletion mechanisms in in irradiated silicon microstrip detectors

The numerical simulation of a silicon microstrip detector is discussed. Physical models for the bulk radiation damage have been taken into account, based on a generalized Shockley-Read-Hall expression of the recombination rate, The actual shape of depletion layer, depending on the radiation fluence, has been investigated. The build-up of a dual depletion layer, as reported in some literature works, has been described and interpreted. (C) 1999 Elsevier Science B.V. All rights reserved.