Low field magnetotransport in La0.7Sr0.3MnO3 films

被引:20
作者
Teo, BS [1 ]
Mathur, ND [1 ]
Isaac, SP [1 ]
Evetts, JE [1 ]
Blamire, MG [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.367627
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed a strong correlation between the degree of epitaxy and the low field resistance versus field R(H) behavior in highly textured La0.7Sr0.3MnO3 films grown by pulsed laser deposition on SrTiO3 substrates. Highly epitaxial films show a small temperature dependent low field hysteretic R(H) peak near the magnetic ordering temperature (T-c), when the applied field is parallel to the transport current (J parallel to H). In contrast, films with reduced epitaxy show a much larger low field hysteretic R(H) behavior with a pronounced in-plane angular dependence. The magnitude of this response grows with decreasing temperature below T-c. Our data and analysis suggest that even low angle grain boundaries play a fundamental role in transport properties in colossal magnetoresistive materials. (C) 1998 American Institute of Physics. [S0021-8979(98)26611-4].
引用
收藏
页码:7157 / 7159
页数:3
相关论文
共 10 条
[1]  
EVETTS JE, IN PRESS PHILOS T A, P356
[2]   Grain-boundary effects on the magnetoresistance properties of perovskite manganite films [J].
Gupta, A ;
Gong, GQ ;
Xiao, G ;
Duncombe, PR ;
Lecoeur, P ;
Trouilloud, P ;
Wang, YY ;
Dravid, VP ;
Sun, JZ .
PHYSICAL REVIEW B, 1996, 54 (22) :15629-15632
[3]   Spin-polarized intergrain tunneling in La-2/Sr-3(1)/3MnO3 [J].
Hwang, HY ;
Cheong, SW ;
Ong, NP ;
Batlogg, B .
PHYSICAL REVIEW LETTERS, 1996, 77 (10) :2041-2044
[4]   THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].
JIN, S ;
TIEFEL, TH ;
MCCORMACK, M ;
FASTNACHT, RA ;
RAMESH, R ;
CHEN, LH .
SCIENCE, 1994, 264 (5157) :413-415
[5]   Low-field magnetoresistive properties of polycrystalline and epitaxial perovskite manganite films [J].
Li, XW ;
Gupta, A ;
Xiao, G ;
Gong, GQ .
APPLIED PHYSICS LETTERS, 1997, 71 (08) :1124-1126
[6]   Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundaries [J].
Mathur, ND ;
Burnell, G ;
Isaac, SP ;
Jackson, TJ ;
Teo, BS ;
MacManusDriscoll, JL ;
Cohen, LF ;
Evetts, JE ;
Blamire, MG .
NATURE, 1997, 387 (6630) :266-268
[7]   VERY LARGE MAGNETORESISTANCE IN PEROVSKITE-LIKE LA-CA-MN-O THIN-FILMS [J].
MCCORMACK, M ;
JIN, S ;
TIEFEL, TH ;
FLEMING, RM ;
PHILLIPS, JM ;
RAMESH, R .
APPLIED PHYSICS LETTERS, 1994, 64 (22) :3045-3047
[8]   Low-field magnetoresistance in tetragonal La1-xCaxMnO3 films [J].
ODonnell, J ;
Onellion, M ;
Rzchowski, MS ;
Eckstein, JN ;
Bozovic, I .
PHYSICAL REVIEW B, 1997, 55 (09) :5873-5879
[9]   Influence of a 36.8 degrees grain boundary on the magnetoresistance of La0.8Sr0.2MnO3-delta single crystal films [J].
Steenbeck, K ;
Eick, T ;
Kirsch, K ;
ODonnell, K ;
Steinbeiss, E .
APPLIED PHYSICS LETTERS, 1997, 71 (07) :968-970
[10]   Observation of large low-field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites [J].
Sun, JZ ;
Gallagher, WJ ;
Duncombe, PR ;
KrusinElbaum, L ;
Altman, RA ;
Gupta, A ;
Lu, Y ;
Gong, GQ ;
Xiao, G .
APPLIED PHYSICS LETTERS, 1996, 69 (21) :3266-3268