Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth

被引：31

作者：

Yoshita, M

Akiyama, H

Pfeiffer, LN

West, KW

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 3B期

关键词：

MBE; cleaved edge overgrowth; (110) GaAs; surface morphology; atomic force microscopy; growth interruption annealing; flat surface formation;

D O I：

10.1143/JJAP.40.L252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs lavers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs laver. Interruption of the 490 degreesC epitaxial GaAs growth by a 10 minute anneal at 600 degreesC under an AS(4) overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens of mum on a side. These results suggest that the (110) GaAs surface has much higher stability under annealing conditions than under MBE growth conditions.

引用

页码：L252 / L254

页数：3

共 16 条

[1] One-dimensional excitons in GaAs quantum wires [J].