Kinetic activation-relaxation technique

被引:133
作者
Beland, Laurent Karim [1 ,2 ]
Brommer, Peter [1 ,2 ]
El-Mellouhi, Fedwa [3 ]
Joly, Jean-Francois [1 ,2 ]
Mousseau, Normand [1 ,2 ]
机构
[1] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada
[2] Univ Montreal, RQMP, Montreal, PQ H3C 3J7, Canada
[3] Texas A&M Qatar, Sci Program, Doha, Qatar
基金
加拿大自然科学与工程研究理事会;
关键词
INTRINSIC POINT-DEFECTS; AB-INITIO CALCULATIONS; MOLECULAR-DYNAMICS; INTERATOMIC POTENTIALS; MONTE-CARLO; ATOMISTIC SIMULATION; DIFFUSION; SILICON; PERFECT; IRON;
D O I
10.1103/PhysRevE.84.046704
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 [等离子体物理]; 070301 [无机化学];
摘要
We present a detailed description of the kinetic activation-relaxation technique (k-ART), an off-lattice, self-learning kinetic Monte Carlo (KMC) algorithm with on-the-fly event search. Combining a topological classification for local environments and event generation with ART nouveau, an efficient unbiased sampling method for finding transition states, k-ART can be applied to complex materials with atoms in off-lattice positions or with elastic deformations that cannot be handled with standard KMC approaches. In addition to presenting the various elements of the algorithm, we demonstrate the general character of k-ART by applying the algorithm to three challenging systems: self-defect annihilation in c-Si (crystalline silicon), self-interstitial diffusion in Fe, and structural relaxation in a-Si (amorphous silicon).
引用
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页数:11
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