Pyroelectric effect in wurtzite gallium nitride

被引：2

作者：

Bykhovski, AD

Kaminski, VV

Shur, MS

Chen, QC

Khan, MA

机构：

来源：

III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷

关键词：

D O I：

10.1557/PROC-423-75

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the measurements of the pyroeffect in wurtzite n-type GaN films deposited over basal plane sapphire substrates. The voltage drop between the contacts was measured while the sample was subjected to uniform heating. Our results show that the pyroelectric effect in GaN can be partially attributed to the secondary pyroelectricity, caused by the development of strain in the material due to thermal expansion.

引用

页码：75 / 79

页数：5