Large-area, selective transfer of microstructured silicon: A printing-based approach to high-performance thin-film transistors supported on flexible substrates

被引:120
作者
Lee, KJ
Motala, MJ
Meitl, MA
Childs, WR
Menard, E
Shim, AK
Rogers, JA
Nuzzo, RG
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[3] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[4] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[5] Dow Corning Corp, Midland, MI 48686 USA
关键词
D O I
10.1002/adma.200500578
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The selective transfer and accurate registration of microstructured silicon (mu s-Si) across large areas is demonstrated using a printing-based procedure applicable to both rigid (i.e., glass) and flexible plastic substrates (see Figure). The utility of this technique to construct macroelectronic systems that incorporate high-performance mu s-Si thin-film transistors on flexible substrates is also demonstrated.
引用
收藏
页码:2332 / +
页数:6
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