Recent progress of photosensitive polyimides

被引:163
作者
Fukuka, Ken-ichi [2 ]
Ueda, Mitsuru [1 ]
机构
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Organ & Polymer Mat, Meguro Ku, Tokyo 1528552, Japan
[2] Mitsui Chem Inc, Mat Sci Lab, Mat Design Unit, Sodegaura, Chiba 2990265, Japan
关键词
photosensitive polyimide; poly(amic acid); photosensitive compound; diazonaphthoquinone; photochemical amplification; photoacid generator; photobase generator; low temperature imidization;
D O I
10.1295/polymj.PJ2007178
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 [高分子化学与物理]; 080501 [材料物理与化学]; 081704 [应用化学];
摘要
Photosensitive polyintides (PSPIs) have been attracting great attention as insulating materials in microelectronic industry, and can be directly patterned to simplify processing steps. This article reviews recent works on development of PSPIs. After brief introduction, a typical PSPI formulation was described in comparison with a conventional method, followed by major strategies for the patterning. A number of recent reports on PSPIs were then divided into two major terms; positive-working and negative-working, and highlighted with focus on their chemistries up to pattern formation. In addition to the photosensitivity of PSPIs picked up in this review, other important subjects such as low-temperature imidization and low dielectric constants were also discussed.
引用
收藏
页码:281 / 296
页数:16
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