A poly-Si TFT integrated gate-data line-crossover structure employing an air-gap for large-size AMLCD panel

We have fabricated a novel poly-Si TFT integrated at the gate-data line-crossover structure without sacrificing the electrical characteristics. The aperture ratio of the panel was increased considerably because the TFT was located under the opaque metal line. In particular we employed a low dielectric air-gap between the gate line and data lines, which reduced capacitance between the gate and data lines, enabling the signal delay of the data line to be significantly decreased. The fabricated TFT was successfully operated, and the proposed structure found to reduce the delay time by a factor of nine compared with conventionally constructed panel without air-bridges.