Theory of tunneling magnetoresistance in granular magnetic films

被引：431

作者：

Inoue, J

Maekawa, S

机构：

[1] Department of Applied Physics, Nagoya University

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.53.R11927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A mechanism for the large magnetoresistance observed recently in Co-Al-O granular magnetic films is presented. It is shown that the resistivity decreases with increasing applied magnetic field because the spin-dependent tunneling increases as the relative orientation of the magnetization between grains becomes parallel. With this mechanism we are able to account for the dependence of the magnetoresistance on the magnetization and temperature.

引用

收藏

页码：11927 / 11929

页数：3

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