Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

被引：53

作者：

Bach, P ^{[1
]}

Bader, AS

Rüster, C

Gould, C

Becker, CR

Schmidt, G

Molenkamp, LW

Weigand, W

Kumpf, C

Umbach, E

Urban, R

Woltersdorf, G

Heinrich, B

机构：

[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Phys Inst EP2, D-97074 Wurzburg, Germany

[3] Simon Fraser Univ, Burnaby, BC V5A IS6, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 03期

关键词：

D O I：

10.1063/1.1594286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy. (C) 2003 American Institute of Physics.

引用

页码：521 / 523

页数：3

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