Solid-state quantum computer based on scanning tunneling microscopy

被引：30

作者：

Berman, GP

Brown, GW

Hawley, ME

Tsifrinovich, VI

机构：

[1] Los Alamos Natl Lab, CNLS, Los Alamos, NM 87545 USA

[2] Polytech Univ, IDS Dept, Brooklyn, NY 11201 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.87.097902

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a solid-state nuclear-spin quantum computer based on application of scanning tunneling microscopy (STM) and well-developed silicon technology. It requires the measurement of tunneling-current modulation caused by the Larmor precession of a single electron spin. Our envisioned STM quantum computer would operate at the high magnetic field (similar to 10 T) and at low temperature similar to1 K.

引用

页码：art. no. / 097902

页数：3

共 7 条

[1] ELEMENTARY GATES FOR QUANTUM COMPUTATION [J].

BARENCO, A ;

BENNETT, CH ;

CLEVE, R ;

DIVINCENZO, DP ;

MARGOLUS, N ;

SHOR, P ;

SLEATOR, T ;

SMOLIN, JA ;

WEINFURTER, H .

PHYSICAL REVIEW A, 1995, 52 (05) :3457-3467

[2] Solid-state nuclear-spin quantum computer based on magnetic resonance force microscopy [J].

Berman, GP ;

Doolen, GD ;

Hammel, PC ;

Tsifrinovich, VI .

PHYSICAL REVIEW B, 2000, 61 (21) :14694-14699

[3] Magnetic resonance force microscopy quantum computer with tellurium donors in silicon [J].

Berman, GP ;

Doolen, GD ;

Hammel, PC ;

Tsifrinovich, VI .

PHYSICAL REVIEW LETTERS, 2001, 86 (13) :2894-2896

[4] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J].

FEHER, G ;

GERE, EA .

PHYSICAL REVIEW, 1959, 114 (05) :1245-1256

[5] A silicon-based nuclear spin quantum computer [J].

Kane, BE .

NATURE, 1998, 393 (6681) :133-137

[6] Electron-spin-resonance STM on iron atoms in silicon [J].

Manassen, Y ;

Mukhopadhyay, I ;

Rao, NR .

PHYSICAL REVIEW B, 2000, 61 (23) :16223-16228

[7] Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures [J].

Vrijen, R ;

Yablonovitch, E ;

Wang, K ;

Jiang, HW ;

Balandin, A ;

Roychowdhury, V ;

Mor, T ;

DiVincenzo, D .

PHYSICAL REVIEW A, 2000, 62 (01) :10

← 1 →