Material properties of polysilicon layers deposited by atmospheric pressure iodine vapor transport

被引：5

作者：

Wang, TH ^{[1
]}

Ciszek, TF ^{[1
]}

Page, M ^{[1
]}

Yan, Y ^{[1
]}

Bauer, R ^{[1
]}

Wang, Q ^{[1
]}

Casey, J ^{[1
]}

Reedy, R ^{[1
]}

Matson, R ^{[1
]}

Ahrenkiel, R ^{[1
]}

Al-Jassim, MM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915773

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Fast (3 mum/min) and direct deposition of large-grain (similar to 20 mum) polycrystalline silicon layers on foreign substrates at intermediate temperatures (similar to 900 degreesC) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm(2)/V .s at a doping density of 5.5x10(17) cm(-3) was measured in an as-deposited material. After hydrogen passivation, it increased to 76 cm(2)/V .s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N+-a-Si/i-a-Si/APIVT-Si(absorber)/P+-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.

引用

页码：138 / 141

页数：4