The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

被引：19

作者：

Ni, X. ^{[1
]}

Li, X. ^{[1
]}

Lee, J. ^{[1
]}

Liu, S. ^{[1
]}

Avrutin, V. ^{[1
]}

Ozgur, U. ^{[1
]}

Morkoc, H. ^{[1
]}

Matulionis, A. ^{[2
]}

Paskova, T. ^{[3
]}

Mulholland, G. ^{[3
]}

Evans, K. R. ^{[3
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA

[2] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[3] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 8-9期

基金：

美国国家科学基金会;

关键词：

nitride semiconductors; InGaN; LEDs; efficiency; hot electrons;

D O I：

10.1002/pssr.201004147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of hot electrons on electroluminescence of in-plane double heterostructure light emitting diode's (with a single 6 nm active layer of In0.20Ga0.80N) is investigated. Diodes with an electron blocking layer (Al0.15Ga0.85N) demonstrate from 3 to 5 times higher electroluminescence efficiency than those without a blocking layer. The lower electroluminescence efficiency in devices without the blocking layer is explained in terms of electron overflow caused by ballistic and quasi-ballistic transport of injected electrons across the InGaN active region. The same mechanism explains the decrease, observed at high current densities, of the electroluminescence efficiency (efficiency droop) in the In0.20Ga0.80N diodes with the Al0.15Ga0.85N blocking layer.

引用

页码：194 / 196

页数：3

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