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Comment on "SiGe intermixing in Ge/Si(100) islands" [Appl. Phys. Lett. 78, 303 (2001)]

被引：6
作者：
Bottomley, DJ [1 ]
机构：
[1] NTT, Basic Res Labs, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 07期
关键词：
D O I：
10.1063/1.1394168
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1060 / 1060
页数：1
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