Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride

被引：13

作者：

Brazzle, JD ^{[1
]}

Dokmeci, MR ^{[1
]}

Mastrangelo, CH ^{[1
]}

机构：

[1] Corning Intellisense Corp, Wilmington, MA 01887 USA

来源：

MEMS 2004: 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/MEMS.2004.1290690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Xenon Difluoride is an isotropic dry etch which is increasingly being used to release structures made of polysilicon. By using a vapor-phase XeF2 pulse etching system we have investigated the effects of aperture size and thickness of polysilicon films versus etch rates. Decreasing the aperture size resulted in reduced etch rates. For a 100 mum wide structure the etch rates varied from 1.38 mum/min (1.25 mum thick polysilicon) down to 0.41 mum/min (0.1 mum thick polysilicon). Rate constants are obtained for a modified, aperture-dependent Deal-Grove model from the experimental data.

引用

页码：737 / 740

页数：4

共 9 条

[1]

CARLEN ET, P EUR 03, P196

[2]

CHAN IWT, 1999, P IEEE CAN C EL COMP, P1637

[3]

CHU PB, 1997, P INT C SOL STAT SEN, P665

[4]

Liu J., 1993, Proceedings. IEEE. Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.93CH3265-6), P71, DOI 10.1109/MEMSYS.1993.296954

[5]

MONK DJ, 1991, P INT C SOL STAT SEN, P647

[6]

Ohring M., 1992, Materials Science of Thin Films, DOI 10.1016/B978-0-12-524975-1.X5000-9

[7]

WALSH K, 2001, P MEMS 01, P50

[8]

WANG XQ, 1997, P INT C SOL STAT SEN, P1505

[9] Two new compounds from Peucedanum decursivum [J].

Yao, NH ;

Kong, LY ;

Niwa, M .

JOURNAL OF ASIAN NATURAL PRODUCTS RESEARCH, 2001, 3 (01) :1-7

← 1 →