Changes in Ca2+ channel expression upon differentiation of SN56 cholinergic cells

被引:24
作者
Kushmerick, C [1 ]
Romano-Silva, MA [1 ]
Gomez, MV [1 ]
Prado, MAM [1 ]
机构
[1] Univ Fed Minas Gerais, Inst Ciencias Biol, Dept Farmacol, BR-31270901 Belo Horizonte, MG, Brazil
关键词
cholinergic neuron; calcium channel; differentiation; cAMP; patch clamp; SN56; cells;
D O I
10.1016/S0006-8993(01)02898-0
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
The SN56 cell line, a fusion of septal neurons and neuroblastoma cells, has been used as a model for central cholinergic neurons. These cells show increased expression of cholinergic neurochemical features upon differentiation, but little is known about how differentiation affects their electrophysiological properties. We examined the changes in Ca2+ channel expression that occur as these cells undergo morphological differentiation in response to serum withdrawal and exposure to dibutyryl-cAMP. Undifferentiated cells expressed a T-type current with biophysical and pharmacological properties similar, although not identical, to those reported for the current generated by the alpha (1H) (CaV3.2) Ca2+ channel subunit. Differentiated cells expressed, in addition to this T-type current, high voltage activated currents which were inhibited 38% by the L-type channel antagonist nifedipine, (5 muM), 37% by the N-type channel antagonist omega -conotoxin-GVIA (1 muM), and 15% by the P/Q-type channel antagonist omega -agatoxin-IVA (200 nM). Current resistant to these inhibitors accounted for 15% of the high voltage activated current in differentiated SN56 cells. Our data demonstrate that differentiation increases the expression of neuronal type voltage gated Ca2+ channels in this cell line, and that the channels expressed are comparable to those reported for native basal forebrain cholinergic neurons. This cell line should thus provide a useful model system to study the relationship between calcium currents and cholinergic function and dysfunction. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:199 / 210
页数:12
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