Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors

被引:11
作者
Farmakis, FV
Dimitriadis, CA
Brini, J
Kamarinos, G
Gueorguiev, VK
Ivanov, TE
机构
[1] ENSERG, LPCS, F-38016 Grenoble 1, France
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
关键词
D O I
10.1063/1.370105
中图分类号
O59 [应用物理学];
学科分类号
摘要
The photon emission induced by the drain avalanche in polycrystalline silicon thin-film transistors (polysilicon TFTs) has been studied in wide drain and gate voltage ranges. As the photon emission phenomenon is closely related to hot-carrier effects, the gate and drain bias conditions for maximum device degradation have been determined from measurements of the emitted light intensity. In n-channel polysilicon TFTs, the effects of bias stressing at the maximum light emission are related to hot-hole trapping into the gate oxide near the drain and to formation of acceptor-like interface states consisted of midgap states and band tails. (C) 1999 American Institute of Physics. [S0021-8979(99)06009-0].
引用
收藏
页码:6917 / 6919
页数:3
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