Novel template-based semiconductor nanostructures and their applications

被引:52
作者
Das, B [1 ]
McGinnis, SP
机构
[1] W Virginia Univ, Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA
[2] Adv Nano Devices LC, Morgantown, WV 26505 USA
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 71卷 / 06期
关键词
D O I
10.1007/s003390000450
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we present a novel template-based technology for the fabrication of large, periodic arrays of semiconductor nanostructures that is inexpensive, reliable, suitable for the fabrication of a variety of semiconductors, and is compatible with the standard CMOS process. The technique uses material growth on a preformed template for med by electrochemical etching (anodization) of a thin film of aluminum deposited on an arbitrary substrate. The template contains a periodic array of pores in which the nanostructure materials are synthesized. The nanostructure size and periodicity can be controlled by controlling the anodization conditions. We are currently using this fabrication technique to develop a variety of optoelectronic devices, brief descriptions of which are also presented.
引用
收藏
页码:681 / 688
页数:8
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