Growth and properties of semi-insulating CdZnTe for radiation detector applications

被引：39

作者：

Szeles, C ^{[1
]}

Driver, MC ^{[1
]}

机构：

[1] EV Prod, Saxonburg, PA 16056 USA

来源：

HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS AND APPLICATIONS | 1998年 / 3446卷

关键词：

CdZnTe; nuclear radiation detectors; Bridgman technique;

D O I：

10.1117/12.312878

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth and properties of semi-insulating CdZnTe for nuclear radiation detector applications are reviewed. The current state of the high-pressure Bridgman growth and the potentials of the conventional vertical and horizontal Bridgman techniques to grow radiation detector material are discussed. The characteristic macroscopic and microscopic defects of high-pressure Bridgman grown CdZnTe ingots, such as cracks, pipes, inclusions, precipitates, grain boundaries and their effect on the electrical and charge trapping properties of the material are reviewed.

引用

页码：2 / 9

页数：8