GaN materials for high power microwave amplifiers

被引：13

作者：

Eastman, LF ^{[1
]}

Chu, K ^{[1
]}

Smart, J ^{[1
]}

Shealy, JR ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Al-y Ga1-yN/GaN HEMT structures is reviewed for a range of y. Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for .15 mu m gates reached 140 GHz, while .3 fun gate power amplifiers reached 74% power-added efficiency at 3 GHz.

引用

页码：3 / 7

页数：5