Analysis of bulk DKDP damage distribution, obscuration and pulse length dependence

被引：21

作者：

Feit, MD ^{[1
]}

Rubenchik, AM ^{[1
]}

Runkel, M ^{[1
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2000, PROCEEDINGS | 2001年 / 4347卷

关键词：

laser damage; KDP; obscuration; pulselength scaling;

D O I：

10.1117/12.425052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent LLNL experiments reported elsewhere at this conference explored the pulselength dependence of 351 nm bulk damage incidence in DKDP. The results found are consistent, in part, with a model in which a distribution of small bulk initiators is assumed to exist in the crystal and the damage threshold is determined by reaching a critical temperature. The observed pulse length dependence can be explained as being set by the most probable defect capable of causing damage at a given pulselength. Analysis of obscuration in side illuminated images of the damaged region yields estimates of the damage site distributions that are in reasonable agreement with the distributions experimentally directly estimated.

引用

页码：383 / 388

页数：6