Growth process of close-packed aligned carbon nanotubes on SiC

被引：22

作者：

Kusunoki, M ^{[1
]}

Honjo, C ^{[1
]}

Suzuki, T ^{[1
]}

Hirayama, T ^{[1
]}

机构：

[1] Japan Fine Ceram Ctr, Mat Res & Dev Lab, Atsuta Ku, Nagoya, Aichi 4568587, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 10期

关键词：

D O I：

10.1063/1.2037848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Densely aligned carbon nanotubes (CNTs) by surface decomposition of SiC (000 (1) over bar) C-face in vacuum were observed by plan-view transmission electron microscopy. It was found that the wall number of CNTs was directly proportional to the diameter of CNTs. Comparing with the theoretical calculation, it was revealed that all of the carbon atoms remained on the surface after the selective evaporation of Si atoms by decomposition of each monolayer of SiC (000 (1) over bar), and then constructed the CNT walls with the minimum diffusion distance at the interface. (c) 2005 American Institute of Physics.

引用

页数：3

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