Material-specific recognition memory deficits elicited by unilateral hippocampal electrical stimulation

被引:92
作者
Coleshill, SG
Binnie, CD
Morris, RG
Alarcón, G
Boas, WV
Velis, DN
Simmons, A
Polkey, CE
van Veelen, CWM
van Rijen, PC
机构
[1] Kings Coll Hosp London, Dept Clin Neurophysiol, London SE5 9RS, England
[2] Kings Coll Hosp London, Dept Neurosurg, London SE5 9RS, England
[3] Inst Psychiat, Dept Psychol, London SE5 8AF, England
[4] Inst Psychiat, Neuroimaging Res Grp, London SE5 8AF, England
[5] Dutch Epilepsy Clin Fdn, NL-2103 SW Heemstede, Netherlands
[6] Univ Med Ctr Utrecht, Dept Neurosurg, NL-3508 GA Utrecht, Netherlands
关键词
hippocampus; medial temporal lobe; electrical stimulation; hippocampal depth electrodes; recognition memory; material-specific effects;
D O I
10.1523/JNEUROSCI.4352-03.2004
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
Although the medial temporal lobe is thought to be critical for recognition memory (RM), the specific role of the hippocampus in RM remains uncertain. We investigated the effects of transient unilateral hippocampal electrical stimulation (ES), subthreshold for afterdischarge, on delayed item RM in epilepsy patients implanted with bilateral hippocampal depth electrodes. RM was assessed using a novel computer-controlled test paradigm in which ES to left or right hippocampus was either absent (baseline) or synchronized with item presentation. Subsequent yes-no RM performance revealed a double dissociation between material-specific RM and the lateralization of ES. Left hippocampal ES produced word RM deficits, whereas right hippocampal ES produced face RM deficits. Our findings provide the first demonstration in humans that selective unilateral stimulation-induced hippocampal disruption is sufficient to produce impairments on delayed RM tasks and provide support for the material-specific laterality of hippocampal function with respect to RM.
引用
收藏
页码:1612 / 1616
页数:5
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