Wet etching of silicon gratings with triangular profiles

被引:27
作者
Frühauf, J [1 ]
Krönert, S [1 ]
机构
[1] Chemnitz Univ Technol, Dept Elect Elect & Informat Engn, D-09107 Chemnitz, Germany
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2005年 / 11卷 / 12期
关键词
silicon; wet etching; triangular gratings; sharp edges;
D O I
10.1007/s00542-005-0612-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Triangular silicon gratings of different size (periods from 0.8 to 25.0 mu m) are manufactured by wet chemical etching. Two main principles of preparation are used and improved. The received gratings are investigated and characterized by SEM concerning the uniformity and the sharpness of the convex edges and the concave notches. Their very small radii determined by TEM are reported for the first time. The gratings can be applied to optical purposes or as standards for surface metrology.
引用
收藏
页码:1287 / 1291
页数:5
相关论文
共 10 条
[1]  
BENEDICT J, 1992, MATER RES SOC SYMP P, V254, P121, DOI 10.1557/PROC-254-121
[2]  
Cianci E., 2000, Proceedings. MICRO.tec 2000. VDE World Microtechnologies Congress, P685
[3]  
*EN ISO, 543612000 EN ISO 1
[4]  
Fruhauf, 2005, SHAPE FUNCTIONAL ELE
[5]  
Fruhauf J., 2004, P 11 INT C SURF 2, P75
[6]   Anisotropic etching for optical gratings [J].
Klumpp, A ;
Kuhl, K ;
Schaber, U ;
Kaufl, HU ;
Lang, W .
SENSORS AND ACTUATORS A-PHYSICAL, 1995, 51 (01) :77-80
[7]  
Kroplin P., 2000, JENAER JB TECHNIK IN, P170
[8]  
Naumann H, 1992, BAUELEMENTE OPTIK TA
[9]  
NEUZIL P, 1995, ELECTROCHEMICAL SOC, V952, P1534
[10]  
SCHWESINGER N, 1996, P 5 INT C MICR OPT M, P481