Fabrication of low-dimension CdSe structures by atomic layer epitaxy

被引：4

作者：

Mikhaevich, DP ^{[1
]}

Ezhovskii, YK ^{[1
]}

机构：

[1] St Petersburg State Technol Inst, St Petersburg, Russia

来源：

RUSSIAN JOURNAL OF APPLIED CHEMISTRY | 2003年 / 76卷 / 08期

关键词：

Cadmium; Selenide; Atomic Layer; Dielectric Matrix; Cadmium Selenide;

D O I：

10.1023/B:RJAC.0000008283.91545.b7

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Formation of thin cadmium selenide films on semiconductor and dielectric matrixes of (100) and (111) orientation from atomic-molecular beams was considered. Temperature ranges in which thin CdSe films are formed were determined. Conditions for layer-by-layer growth of nanostructures were established.

引用

页码：1197 / 1200

页数：4

共 10 条

[1]

ALESKOVSKII VB, 1976, STEKHIOMETRIYA SINTE

[2]

DMITRUK NL, 1980, IZV VYSSH UCHEBN ZAV, P2103

[3]

EZHOVSKII YK, 2001, IZV AKAD NAUK NM, V37, P274

[4]

EZHOVSKII YK, 1987, ZH PRIKL KHIM, V60, P2361

[5]

Gelatos J, 2003, SOLID STATE TECHNOL, V46, P44

[6]

KISELEV VF, 1978, ADSORBTSIONNYE PROTE

[7]

Ming X., 2001, SOLID STATE TECHNOL, V44, P70

[8]

Rzhanov A.V., 1979, Osnovy ellipsometrii (Fundamentals for Ellipsometry)

[9]

SHALIMOVA KV, 1970, ELEKT TEKHNIKA SER, V14, P31

[10]

Suntola T., 1989, Material Science Reports, V4, P261, DOI 10.1016/S0920-2307(89)80006-4

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