Line width dependence of copper resistivity

被引：26

作者：

Jiang, QT ^{[1
]}

Tsai, MH ^{[1
]}

Havemann, RH ^{[1
]}

机构：

[1] Int Sematech, Austin, TX USA

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Studies were carried out to characterize the copper line resistivity as a function of linewidth for sub-130 nm feature size. The Cu line resistivity was found to increase rapidly as the feature size becomes smaller than 0.2 mum. Electron scattering from both sidewalls and grain boundaries played significant roles even at geometries several times of the electron mean free path in Cu.

引用

页码：227 / 229

页数：3