Impurity effect on ⟨111⟩ and ⟨110⟩ directions of growing SnO2 single crystals in SnO2-CU2O flux System

被引:6
作者
Kawamura, F [1 ]
Takahashi, T [1 ]
Yasui, I [1 ]
Sunagawa, I [1 ]
机构
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
关键词
single crystal growth;
D O I
10.1016/S0022-0248(01)01551-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Impurity effects of tri-valent cations on the growth of (1 1 1) and (1 1 0) faces of SnO2 in the SnO2-Cu-2O flux system were investigated using an improved dipping method by which supersaturation can be maintained constant, using Cr3+ as a representative cation. It was confirmed that the presence of Cr3+ accelerates the growth rate in the < 1 1 1 > direction and suppresses that in the <1 1 0 > direction. Observation of the surface morphology of the (1 1 0) face indicated that Cr3+ inactivates kink sites of <0 1 > steps on the (1 1 0) surface, and breaks periodic bond chains on the (I 1 1) surface, resulting in the transformation of the (1 1 1) surface from a smoother to a rougher interface. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:259 / 268
页数:10
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