CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells

被引：25

作者：

Mane, Rajaram S. ^{[1
,2
]}

Shinde, Dipak V. ^{[2
]}

Yoon, Seog Joon ^{[2
]}

Ambade, Swapnil B. ^{[1
]}

Lee, Joong Kee ^{[3
]}

Han, Sung-Hwan ^{[2
]}

机构：

[1] Swami Ramanand Teerth Marathwada Univ, Sch Phys Sci, Nanded 431606, India

[2] Hanyang Univ, Inorgan Nanomat Lab, Dept Chem, Seoul 133791, South Korea

[3] Korea Inst Sci & Technol, Adv Energy Mat Proc Lab, Energy Storage Ctr, Seoul 136791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

SENSITIZED SOLAR-CELLS; NANOWIRE ARRAYS; PHOTOSENSITIZATION; NANOPARTICLES; GROWTH; FILMS;

D O I：

10.1063/1.4737865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly reproducible, wet-chemically processed, CdS buffer-layer free ZnO-CdSe photoelectrochemical cells with 3.38% power conversion efficiency have been fabricated. An enhanced current density is observed due to increase in number of injected photoelectrons with CdSe nanoparticles loading time. Impedance spectroscopy results suggest that interfacial resistance is strongly dependant on CdSe nanoparticles loading time. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737865]

引用

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