Stacked quantum dot transistor and charge-induced confinement enhancement

被引：3

作者：

Guo, LJ ^{[1
]}

Chou, SY ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Nanostruct Lab, Princeton, NJ 08544 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 10期

关键词：

D O I：

10.1049/el:19980717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new quantum dot transistor that has a polysilicon dot floating gate stacked on top of a silicon quantum dot channel has been fabricated. It is observed that charging of the floating gate not only shifts the threshold voltage of the quantum dot transistor, but also significantly increases the peak-to-valley ratio and peak separation in the conductance oscillations.

引用

页码：1030 / 1031

页数：2

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