Impact of low pressure long throw sputtering method on submicron copper metallization

被引：13

作者：

Saito, T ^{[1
]}

Ohashi, N ^{[1
]}

Yasuda, J ^{[1
]}

Noguchi, J ^{[1
]}

Imai, T ^{[1
]}

Sasajima, K ^{[1
]}

Hiruma, K ^{[1
]}

Yamaguchi, H ^{[1
]}

Owada, N ^{[1
]}

机构：

[1] Hitachi Ltd, Device Dev Ctr, Tokyo 1988512, Japan

来源：

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 1998年

关键词：

D O I：

10.1109/IITC.1998.704779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu metallization technology using sputtered Cu wiring and W-plug is developed. Submicron trenches for wiring with even 0.4 mu m in width are filled with Cu by a low-pressure long-throw sputtering method followed by a reflow process. Blanket-W CVD with sputtered W barrier is used for via filling. Using above mentioned technologies, multilevel Cu interconnect test structures are fabricated successfully.

引用

页码：160 / 162

页数：3