Atom probe analysis of roughness and chemical intermixing in CoFe/Cu films (invited)

被引:21
作者
Larson, DJ [1 ]
Cerezo, A
Clifton, PH
Petford-Long, AK
Martens, RL
Kelly, TF
Tabat, N
机构
[1] Seagate Technol, Recording Head Operat, Minneapolis, MN 55435 USA
[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[3] Seagate Technol, Res & Dev, Londonderry BT48 0BF, North Ireland
[4] Imago Sci Instruments, Madison, WI 53706 USA
关键词
D O I
10.1063/1.1354593
中图分类号
O59 [应用物理学];
学科分类号
摘要
Three-dimensional atom probe analyses of the interfaces between CoFe and Cu layers has shown that both roughness and chemical intermixing can occur independently. Interfaces formed by the deposition of Cu onto CoFe mimic the roughness present in previously deposited interfaces, but have a very small amount of interfacial mixing. In contrast, interfaces formed by the deposition of CoFe onto Cu are less rough, but more chemically intermixed. The region of chemical intermixing formed when CoFe is deposited onto Cu (0.7-1.0 nm) is approximately two times larger than that when Cu is deposited onto CoFe (0.3-0.5 nm). (C) 2001 American Institute of Physics.
引用
收藏
页码:7517 / 7521
页数:5
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