Nonlinear structure-composition relationships in the Ge1-ySny/Si(100) (y < 0.15) system

被引:56
作者
Beeler, R. [1 ]
Roucka, R. [1 ]
Chizmeshya, A. V. G. [1 ]
Kouvetakis, J. [1 ]
Menendez, J. [2 ]
机构
[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
来源
PHYSICAL REVIEW B | 2011年 / 84卷 / 03期
基金
美国国家科学基金会;
关键词
RANDOM SEMICONDUCTOR ALLOYS; VEGARDS LAW; LENGTH MISMATCH; BOND LENGTHS; SNXGE1-X; CRYSTALLINE; SILICON; DENSITY; LAYERS; SIGE;
D O I
10.1103/PhysRevB.84.035204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The compositional dependence of the cubic lattice parameter in Ge1-ySny alloys has been revisited. Large 1000-atom supercell ab initio simulations confirm earlier theoretical predictions that indicate a positive quadratic deviation from Vegard's law, albeit with a somewhat smaller bowing coefficient, theta = 0.047 angstrom, than found from 64-atom cell simulations (theta = 0.063 angstrom). On the other hand, measurements from an extensive set of alloy samples with compositions y < 0.15 reveal a negative deviation from Vegard's law. The discrepancy with earlier experimental data, which supported the theoretical results, is traced back to an unexpected compositional dependence of the residual strain after growth on Si substrates. The experimental bowing parameter for the relaxed lattice constant of the alloys is found to be theta = -0.066 angstrom. Possible reasons for the disagreement between theory and experiment are discussed in detail.
引用
收藏
页数:8
相关论文
共 38 条
[1]   BOND-LENGTH RELAXATION IN SI1-XGEX ALLOYS [J].
ALDRICH, DB ;
NEMANICH, RJ ;
SAYERS, DE .
PHYSICAL REVIEW B, 1994, 50 (20) :15026-15033
[2]   First-shell bond lengths in SixGe1-x crystalline alloys [J].
Aubry, JC ;
Tyliszczak, T ;
Hitchcock, AP ;
Baribeau, JM ;
Jackman, TE .
PHYSICAL REVIEW B, 1999, 59 (20) :12872-12883
[3]   Ge-Sn semiconductors for band-gap and lattice engineering [J].
Bauer, M ;
Taraci, J ;
Tolle, J ;
Chizmeshya, AVG ;
Zollner, S ;
Smith, DJ ;
Menendez, J ;
Hu, CW ;
Kouvetakis, J .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :2992-2994
[4]   ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228
[5]   LENGTH MISMATCH IN RANDOM SEMICONDUCTOR ALLOYS .1. GENERAL-THEORY FOR QUATERNARIES [J].
CAI, Y ;
THORPE, MF .
PHYSICAL REVIEW B, 1992, 46 (24) :15872-15878
[6]   Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications [J].
Cannon, DD ;
Liu, JF ;
Ishikawa, Y ;
Wada, K ;
Danielson, DT ;
Jongthammanurak, S ;
Michel, J ;
Kimerling, LC .
APPLIED PHYSICS LETTERS, 2004, 84 (06) :906-908
[7]   Electron-phonon interaction in tetrahedral semiconductors [J].
Cardona, M .
SOLID STATE COMMUNICATIONS, 2005, 133 (01) :3-18
[8]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[9]   Unusual structural and electronic properties of SnxGe1-x alloys [J].
Chibane, Y ;
Bouhafs, B ;
Ferhat, M .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 240 (01) :116-119
[10]   Electronic structure of SnxGe1-x alloys for small Sn compositions: Unusual structural and electronic properties [J].
Chibane, Y. ;
Ferhat, M. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)