Two-step-etching process of MoW gate metal on large TFT glass substrates

被引：4

作者：

Okajima, K

Sato, T

Dohi, T

Shibata, M

机构：

[1] Display Technol Inc, Array Proc Engn 2, Yasu Plant, Yasu, Shiga 52023, Japan

[2] Toshiba Corp, LCD Array Proc & Mfg Engn Dept, LCD Div, Yobe Ku, Himeji, Hyogo 67112, Japan

来源：

VACUUM | 1998年 / 51卷 / 04期

关键词：

D O I：

10.1016/S0042-207X(98)00287-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low resistance MoW TFT gate metal is etched by chemical dry etching (CDE) on 550 mm x 650 mm glass substrate. In order to achieve both an adequately tapered edge and sufficient productivity at the same time, a two-step-etching process at an elevated temperature is developed. In. the two-step-etching process, the condition used just prior to etch through of the MoW is drastically changed just after etch through in order to control the loading effect due to the changed MoW area. The angle of the resulting tapered edge is approximately 30 degrees and the two-step-etching process also shows adequate productivity. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：765 / 768

页数：4