Getting to the bottom of deep submicron

被引:128
作者
Sylvester, D [1 ]
Keutzer, K [1 ]
机构
[1] Univ Calif Berkeley, Berkeley, CA 94720 USA
来源
1998 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN: DIGEST OF TECHNICAL PAPERS | 1998年
关键词
interconnect modeling; gate delay; CMOS scaling; signal integrity; power dissipation; ASIC; wirelength;
D O I
10.1109/ICCAD.1998.742874
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this tutorial, we take a fresh look at the problems posed by deep submicron (DSM) geometries and re-open the investigation into how DSM effects are most likely going to affect future design methodologies. We describe a comprehensive approach to accurately characterizing the device and interconnect characteristics of present and future process generations This approach results in the generation of a representative strawman technology that is used in conjunction with analytical models, simulation tools and empirical design data to obtain a realistic picture of the future of circuit design. We then proceed to quantify the precise impact of interconnect, including delay degradation due to noise, on high-performance ASIC designs. Having determined the role of interconnect in performance, we then reconsider the impact of future processes on ASIC design methodology.
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页码:203 / 211
页数:9
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