Growth of bismuth sulfide nanowire using bismuth trisxanthate single source precursors

被引:203
作者
Koh, YW
Lai, CS
Du, AY
Tiekink, ERT
Loh, KP
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
关键词
D O I
10.1021/cm021813k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Crystalline Bi2S3 nanorods, nanotapes, and nanocrystals were obtained from the solvent thermalysis of bismuth trisxanthate precursors and related bismuth dithiocarbamate species in ethylene glycol at 197 degreesC. Precursors with different structural motifs were designed to produce compounds with different thermal decomposition temparatures, i.e., the dimeric motif of Bi(S2COR)(3) when R = methyl and ethyl was found to have a lower decomposition temperature compared to precursors adopting the polymeric structure, so that solvothermalysis of the former gave rise to short nanocrystals; while in the case of the latter, long nanofibers were produced instead. Chemical vapor deposition on silicon substrates yielded well-defined nanorods of various lengths and diameters for almost all precursors. Internal microstructure of the nanorods was studied by high-resolution transmission electron microscopy.
引用
收藏
页码:4544 / 4554
页数:11
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