Characterization and application of a UV-based imprint technique

被引:75
作者
Otto, M [1 ]
Bender, M [1 ]
Hadam, B [1 ]
Spangenberg, B [1 ]
Kurz, H [1 ]
机构
[1] Rhein Westfal TH Aachen, Inst Halbleitertech 2, D-52074 Aachen, Germany
关键词
D O I
10.1016/S0167-9317(01)00536-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated a UV-based nanoimprint technique with regard to its potential for large area applications. One aspect is the investigation of the residual resist thickness h(r), which depends on the geometry of the mold. If the geometry of structures to be printed varies strongly across the mold, fluctuations of the residual resist thickness and incomplete filling of the structures can occur. As a consequence, best results will be obtained with periodic structures and periodically arranged structures as is demonstrated with imprinted metal-semiconductor-metal (MSM) patterns. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:361 / 366
页数:6
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