Improving the NH3 gas sensitivity of ZnO nanowire sensors by reducing the carrier concentration

被引:113
作者
Law, J. B. K. [1 ]
Thong, J. T. L. [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
关键词
D O I
10.1088/0957-4484/19/20/205502
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report a method to improve the sensitivity of a zinc oxide (ZnO) nanowire gas sensor towards ammonia (NH3) without the use of catalyst nanoparticles on the nanowire surface. This improvement is achieved by lowering the nominal carrier concentration in the as-grown ZnO nanowires. The carrier concentration in the as-grown ZnO nanowires can be tuned by treating these nanowires to either an oxidizing gas plasma or a reducing gas plasma, as observed from the measured current-voltage (I-V) characteristics response. We demonstrate that a ZnO nanowire sensor device that has been subjected to oxygen plasma treatment, thereby having a reduced carrier concentration, exhibits a sensitivity towards 0.75% NH3 gas that is improved by approximately four times. The origin of this gas sensitivity improvement is discussed based on x-ray photoelectron spectroscopy analysis results of the plasma-treated ZnO nanowires.
引用
收藏
页数:5
相关论文
共 23 条
[1]   Platinum contamination issues in ferroelectric memories [J].
Boubekeur, H ;
Mikolajick, T ;
Pamler, W ;
Höpfner, J ;
Frey, L ;
Ryssel, H .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) :3257-3265
[2]   Reduced-temperature ethanol sensing characteristics of flower-like ZnO nanorods synthesized by a sonochemical method [J].
Chen, Yujin ;
Zhu, C. L. ;
Xiao, G. .
NANOTECHNOLOGY, 2006, 17 (18) :4537-4541
[3]   Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer [J].
Conley, JF ;
Stecker, L ;
Ono, Y .
NANOTECHNOLOGY, 2005, 16 (02) :292-296
[4]   Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar) [J].
Coppa, BJ ;
Davis, RF ;
Nemanich, RJ .
APPLIED PHYSICS LETTERS, 2003, 82 (03) :400-402
[5]   Gate-refreshable nanowire chemical sensors [J].
Fan, ZY ;
Lu, JG .
APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3
[6]   Synthesis and properties of multipod-shaped ZnO nanorods for gas-sensor applications [J].
Gao, T ;
Wang, TH .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (07) :1451-1454
[7]  
HEILAND G, 1982, SENSOR ACTUATOR, V2, P343, DOI 10.1016/0250-6874(81)80055-8
[8]   XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films [J].
Islam, MN ;
Ghosh, TB ;
Chopra, KL ;
Acharya, HN .
THIN SOLID FILMS, 1996, 280 (1-2) :20-25
[9]   Lateral ZnO nanowire growth on a planar substrate using a growth barrier [J].
Law, J. B. K. ;
Thong, J. T. L. .
NANOTECHNOLOGY, 2007, 18 (05)
[10]  
LAW JBK, 2006, APPL PHYS LETT, V88, P31141