共 57 条
[5]
180nm Sn-doped Ge2Sb2Te5 chalcogenide phase-change memory device for low power, high speed embedded memory for SoC applications
[J].
PROCEEDINGS OF THE IEEE 2003 CUSTOM INTEGRATED CIRCUITS CONFERENCE,
2003,
:395-398
[9]
DAS VD, 1987, J MATER SCI, V22, P3522, DOI 10.1007/BF01161452