Melt growth of quasi-binary (GaSb)1-x(InAs)x crystals

被引：14

作者：

Dutta, PS ^{[1
]}

Ostrogorsky, AG ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Dept Mech Engn Aeronaut Engn & Mech, Troy, NY 12180 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 198卷

关键词：

D O I：

10.1016/S0022-0248(98)01222-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new class of III-V quasi-binary [A(III)B(v)](1-x)[CIIIDV](x) semiconductor alloys has been synthesized and bulk crystals grown from the melt for the first time. The present investigation is focused on (GaSb)(1-x)(lnAs)(x) (0 < x < 0.05) due to its importance for thermophotovoltaic applications. The structural properties of this melt-grown quasi-binary alloy are found to be significantly different from the conventional quaternary compound Ga1-xInxAsySb1-y with composition x = y. Synthesis and growth procedures are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：384 / 389

页数：6

共 13 条

[1]

AHRENKIEL RK, 1996, AIP C P, V358, P434

[2] MELT AND SOLUTION GROWTH OF BULK SINGLE-CRYSTALS OF QUATERNARY-III-V ALLOYS [J].